PHOTOELECTRIC AMPLIFICATION OF VARIBAND PHOTORESISTORS

Citation
Vg. Savitskii et Bs. Sokolovskii, PHOTOELECTRIC AMPLIFICATION OF VARIBAND PHOTORESISTORS, Semiconductors, 31(1), 1997, pp. 1-3
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
31
Issue
1
Year of publication
1997
Pages
1 - 3
Database
ISI
SICI code
1063-7826(1997)31:1<1:PAOVP>2.0.ZU;2-Z
Abstract
Characteristic features of the photoelectric amplification of variband photoresistors, whose energy gap increases linearly toward the contac ts, are theoretically investigated. It is shown that such photoresisto rs are characterized by a nonmonotonic held-dependence of the photoele ctric gain, whose maximum value increases with growth of the energy ga p gradient and can substantially exceed the corresponding value for ho mogeneous samples. (C) 1997 American Institute of Physics.