ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF A PD-P(0)-SI-P-SI STRUCTURE WITH A DISORDERED INTERMEDIATE P(0) LAYER

The electrical characteristics and the photovoltage on Pd-po-Si-p-Si d iode structures with a disordered (porous) p(0) layer of Si have been measured. The current-transfer mechanism is assumed to be double injec tion of electrons and holes into the p(0) layer. In a hydrogen atmosph ere, the photovoltage increases by a factor of 20 and the reverse curr ent falls by a factor of 3-4. The increase of the photovoltage is asso ciated with the growth of a Pd-p(0)-Si Schottky barrier, while the dec rease of the dark current is attributable to the variation in the amou nt of injected electrons. The relaxation of the photovoltage after tur ning off the H-2 how has two time intervals, with lengths of about 130 and 420 sec. It is shown that these features of the relaxation are as sociated with heterogeneity of the structure of the p(0) layer, which includes unanodized sections and porous sections. These regions of the structure each contain their own set of deep traps and recombination centers. This set of traps and recombination centers can vary as a res ult of the introduction of hydrogen which creates induced ''temporary' ' deep levels. (C) 1997 American Institute of Physics.