ANALYSIS OF THE TEMPORAL INSTABILITY OF THE PARAMETERS OF AN INSULATOR III-V COMPOUND BY THE ISOTHERMAL CAPACITANCE RELAXATION METHOD/

Existing diagnostic techniques used to evaluate the temporal instabili ty of the parameters of a semiconductor-insulator interface with deep- level centers are analyzed. A method is proposed for evaluating tempor al instability according to the long-term isothermal transient behavio r of the capacitance of a metal-insulator-semiconductor structure. The energy spectrum of the effective density of surface states is determi ned for pr-type InP-SiO2-Al structures prepared by chemical vapor depo sition. The variation of the capacitance during long-term isothermal r elaxation provides a criterion of temporal instability of a semiconduc tor-insulator interface. (C) 1997 American Institute of Physics.