Ls. Berman, ANALYSIS OF THE TEMPORAL INSTABILITY OF THE PARAMETERS OF AN INSULATOR III-V COMPOUND BY THE ISOTHERMAL CAPACITANCE RELAXATION METHOD/, Semiconductors, 31(1), 1997, pp. 63-66
Existing diagnostic techniques used to evaluate the temporal instabili
ty of the parameters of a semiconductor-insulator interface with deep-
level centers are analyzed. A method is proposed for evaluating tempor
al instability according to the long-term isothermal transient behavio
r of the capacitance of a metal-insulator-semiconductor structure. The
energy spectrum of the effective density of surface states is determi
ned for pr-type InP-SiO2-Al structures prepared by chemical vapor depo
sition. The variation of the capacitance during long-term isothermal r
elaxation provides a criterion of temporal instability of a semiconduc
tor-insulator interface. (C) 1997 American Institute of Physics.