ELECTRON-PHONON SCATTERING ENGINEERING

We present calculations which show that independent quantization of el ectrons and phonons allows the intra- and intersubband electron-phonon scattering rate in two-dimensional structures to be changed. It is co nsidered how the design of multi-heterostructure quantum well (QW) cha nges the electron mobility and population of subbands in the QW. It wa s shown that the insertion of the phonon wall (a few AlAs monolayers) into an AlAs/GaAs/AlAs double heterostructure allows the electron mobi lity in the QW to be enhanced and electron intersubband population to be inverted. (C) 1997 American Institute of Physics.