MONTE-CARLO SIMULATION OF THE LOW-TEMPERATURE MOBILITY OF 2-DIMENSIONAL ELECTRONS IN A SILICON INVERSION LAYER

The transport of two-dimensional electrons in a silicon inversion laye r is determined by Monte Carlo simulation in the temperature range 4.2 -40 K, where the electrical quantum limit occurs and only the lowest s ubband is populated. Two scattering mechanisms are taken into account: scattering by distant ionized impurities and scattering by surface ro ughness elements, along with their dependence on the polarizability of the two-dimensional electron gas. The mobility and coefficient of war m electrons in weak electric fields are calculated. The data are compa red with previously published results. (C) 1997 American Institute of Physics.