STUDY OF PBTE PHOTODIODES ON A BUFFER SUBLAYER OF POROUS SILICON

Authors
BELYAKOV LV ZAKHAROVA IB ZUBKOVA TI MUSIKHIN SF RYKOV SA
Citation
Lv. Belyakov et al., STUDY OF PBTE PHOTODIODES ON A BUFFER SUBLAYER OF POROUS SILICON, Semiconductors, 31(1), 1997, pp. 76-77
Citations number
4
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
1
Year of publication
1997
Pages
76 - 77
Database
ISI
SICI code
1063-7826(1997)31:1<76:SOPPOA>2.0.ZU;2-M
Abstract
The formation of epitaxial lead-telluride films on a silicon substrate with a porous-silicon sublayer is investigated. In these structures v ertical-type infrared photodiodes were produced using ion doping. Desp ite a great mismatch in the lattice constants and the temperature expa nsion coefficients between silicon and lead telluride, the photodiode parameters are similar to those of photodiodes in the orienting substr ates. (C) 1997 American institute of Physics.