An analytical calculation of the high-frequency capacitance-voltage ch
aracteristic of a GaAs thin-film structure is carried out. It is shown
that the peculiarities of this characteristic, namely an abrupt drop
followed by a falloff to zero, are due to the merging of the depletion
regions of the Schottky barrier and the film-substrate junction and t
o a lag in the recharging of deep centers in the substrate. (C) 1997 A
merican Institute of Physics.