HIGH-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTIC OF GAAS-BASED, THIN-FILM STRUCTURES

An analytical calculation of the high-frequency capacitance-voltage ch aracteristic of a GaAs thin-film structure is carried out. It is shown that the peculiarities of this characteristic, namely an abrupt drop followed by a falloff to zero, are due to the merging of the depletion regions of the Schottky barrier and the film-substrate junction and t o a lag in the recharging of deep centers in the substrate. (C) 1997 A merican Institute of Physics.