ANALYSIS OF BONDING STATE IN PURE AND GOLD-IMPLANTED AMORPHOUS SIC BYA COMBINATION OF UHVEM AND AES

Single crystalline alpha-SiC films and Au(target metal)/alpha-SiC(subs trate) bilayer films were irradiated with 2-MeV electrons in an ultrah igh-voltage electron microscope (UHVEM) to form, in situ, pure amorpho us SIC (a-SiC) and gold-implanted a-SiC, respectively. In the latter c ase, sample films were set so that the electron beam was incident on t he gold layer, Differences in the bonding state between pure a-SiC and gold-implanted a-SiC were studied by Auger valence electron spectrosc opy (AES), In pure a-SiC, the carbon valence state was markedly differ ent from that of alpha-SiC but the silicon valence state was similar t o that of alpha-SiC. In goldimplanted alpha-SiC, both the carbon and t he silicon valence states were different from those of alpha-SiC. It i s suggested that a high density of molecularized carbon clusters are f ormed in the amorphous matrix in gold-enriched a-SiC.