CATHODOLUMINESCENCE OF P-N-P MICROSTRUCTURES IN CUINSE2 CRYSTALS

Microstructures in p-CuInSe2 single crystals tailored by the strong el ectric field have been studied using the method of local (d less than or equal to 1 mu m) cathodoluminescence (CL). The shortest-wavelength radiation (<(h)over bar omega> = 1.023 eV) has been observed from the n-type layer and longer-wavelength radiation (<(h)over bar omega> = 1. 006 eV)-from the p-type regions. An analysis of the cathodoluminescenc e spectra has allowed us to attribute the experimental features to opt ical transitions associated with donor and acceptor levels of V-cu, V- se, and Cu-i point defects in the crystal. Test measurements of EBIC, the C-V characteristics, and the DLT spectra confirm the cathodolumine scence data and reveal additional features of the p-n-p microstructure s. (C) 1997 American Institute of Physics.