CHARACTERIZATION OF AN ONO-STACKED INSULATOR FILM FOR A SILICON MICRO-STRIP DETECTOR

Authors
OKUNO S IKEDA H SAITOH Y AKAMINE T INOUE M YAMANAKA J KADOI K KOJIMA Y MIYAHARA SI KAMIYA M
Citation
S. Okuno et al., CHARACTERIZATION OF AN ONO-STACKED INSULATOR FILM FOR A SILICON MICRO-STRIP DETECTOR, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 385(2), 1997, pp. 299-305
Citations number
21
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
385
Issue
2
Year of publication
1997
Pages
299 - 305
Database
ISI
SICI code
0168-9002(1997)385:2<299:COAOIF>2.0.ZU;2-B
Abstract
A semi-empirical model for an ONO-stacked insulator film is presented together with its implications, The model covers ONO, ON, and NO films as well as single-layered SiO2 and Si3N4. We eventually present an as sessment for estimating the lifetime of an ONO-stacked insulator film for a given configuration.