DESIGN AND EVALUATION OF AC-COUPLED, FOXFET-BIASED, EDGE-ON SILICON STRIP DETECTORS FOR X-RAY-IMAGING

Authors
ARFELLI F BONVICINI V BRAVIN A BURGER P CANTATORE G CASTELLI E DIMICHIEL M LONGO R OLIVO A PANI S PONTONI D POROPAT P PREST M RASHEVSKY A TROMBA G VACCHI A ZAMPA N
Citation
F. Arfelli et al., DESIGN AND EVALUATION OF AC-COUPLED, FOXFET-BIASED, EDGE-ON SILICON STRIP DETECTORS FOR X-RAY-IMAGING, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 385(2), 1997, pp. 311-320
Citations number
15
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
385
Issue
2
Year of publication
1997
Pages
311 - 320
Database
ISI
SICI code
0168-9002(1997)385:2<311:DAEOAF>2.0.ZU;2-D
Abstract
A silicon strip detector for the SYRMEP (SYnchrotron Radiation for MEd ical Physics) experiment has been designed and realised. The main feat ures of this detector are AC-coupling through integrated coupling capa citors, DC bias of the strips by means of a gated punch-through struct ure, bulk contact on the junction side through a forward-biased p(+) i mplant, thinned entrance window for the incoming radiation (in an ''ed ge-on'' geometry) and integrated fan-in on active silicon. Results of laboratory tests of the detector parameters, allowing a thorough evalu ation of the technological solutions employed, are presented.