M. Ciarrocca et al., A MODELOCKED SEMICONDUCTOR-LASER FOR A POLARIZED ELECTRON SOURCE, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 385(2), 1997, pp. 381-384
We have constructed a prototype compact laser system based on GaAlAs s
emiconductor diodes. It has been designed specifically to be used with
strained GaAs type photocathodes as a source for CW electron accelera
tors. It produces pulses of picosecond duration, at a repetition rate
that can be set anywhere between 0.3 and 3 GHz. The system operates at
average powers up to 150 mW, and the semiconductors that are presentl
y installed emit at a wavelength of 847 nm with a 4 nm tuning range, t
hough these can be easily substituted to give a 70 nm tuning range.