X-RAY PHOTOELECTRON-SPECTRA AND ELECTRICAL-PROPERTIES OF NEW METAL-COMPLEXES OF [M(DMID)(2)][TAA](X)

Citation
Sg. Liu et al., X-RAY PHOTOELECTRON-SPECTRA AND ELECTRICAL-PROPERTIES OF NEW METAL-COMPLEXES OF [M(DMID)(2)][TAA](X), Synthetic metals, 74(2), 1995, pp. 137-143
Citations number
27
Categorie Soggetti
Physics, Condensed Matter","Metallurgy & Metallurigical Engineering
Journal title
ISSN journal
03796779
Volume
74
Issue
2
Year of publication
1995
Pages
137 - 143
Database
ISI
SICI code
0379-6779(1995)74:2<137:XPAEON>2.0.ZU;2-P
Abstract
X-ray photoelectron spectroscopy (XPS) spectra of a series of metal co mplexes of the DMID ligand [M(DMID)(2)[TAA](x). (DMID = 1,3-dithiole-2 -one-4,5-dithiolate, M = Ni, Cu, Zn; TAA = tetraalkylammonium such as tetrabutylammonium (TBA), tetraethylammonium (TEA), and tetramethylamm onium (TMA); X = integer or non-integer) were studied by comparing wit h other metal bisdithiolene complexes. The XPS results show that in th e metal-DMID complexes the formal oxidation states of the central chel ating metal ion are in the valence states of 3 + with the extra negati ve charge residing essentially on the ligands, especially on the sulfu r atoms, and the electron density on the sulfur atoms is higher than t hat in the electron-rich organic donor molecule tetrathiafulvalene (TT F). Electrical properties of these complexes were investigated by cond uctivity and cyclic voltammetric measurements. Furthermore, the effect s of the central metal atoms, counter cations and ligands on the elect rical properties and XPS shifts are discussed.