Sg. Liu et al., X-RAY PHOTOELECTRON-SPECTRA AND ELECTRICAL-PROPERTIES OF NEW METAL-COMPLEXES OF [M(DMID)(2)][TAA](X), Synthetic metals, 74(2), 1995, pp. 137-143
X-ray photoelectron spectroscopy (XPS) spectra of a series of metal co
mplexes of the DMID ligand [M(DMID)(2)[TAA](x). (DMID = 1,3-dithiole-2
-one-4,5-dithiolate, M = Ni, Cu, Zn; TAA = tetraalkylammonium such as
tetrabutylammonium (TBA), tetraethylammonium (TEA), and tetramethylamm
onium (TMA); X = integer or non-integer) were studied by comparing wit
h other metal bisdithiolene complexes. The XPS results show that in th
e metal-DMID complexes the formal oxidation states of the central chel
ating metal ion are in the valence states of 3 + with the extra negati
ve charge residing essentially on the ligands, especially on the sulfu
r atoms, and the electron density on the sulfur atoms is higher than t
hat in the electron-rich organic donor molecule tetrathiafulvalene (TT
F). Electrical properties of these complexes were investigated by cond
uctivity and cyclic voltammetric measurements. Furthermore, the effect
s of the central metal atoms, counter cations and ligands on the elect
rical properties and XPS shifts are discussed.