GROWTH OF GRAIN-BOUNDARIES OF THE SUBSTRATE DURING EPITAXIAL-GROWTH OF SILICON

Authors
LOZOVSKII VN KONSTANTINOVA GS
Citation
Vn. Lozovskii et Gs. Konstantinova, GROWTH OF GRAIN-BOUNDARIES OF THE SUBSTRATE DURING EPITAXIAL-GROWTH OF SILICON, Kristallografia, 41(6), 1996, pp. 1099-1102
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Kristallografia → ACNP
ISSN journal
00234761
Volume
41
Issue
6
Year of publication
1996
Pages
1099 - 1102
Database
ISI
SICI code
0023-4761(1996)41:6<1099:GOGOTS>2.0.ZU;2-T