PECULIARITIES OF ELECTRONIC-PROPERTIES OF DELTA[SB] LAYERS IN EPITAXIAL SI .1. GENERAL PHYSICAL PATTERN

The variation of electronic kinetic characteristics (conductivity, mag netoresistance, Hall emf) with temperature has been studied over a tem perature range 1.6-300 K in epitaxial Si crystals involving delta(Sb) layer with a different sheet concentration of Sb doping atoms. It has been established for the first time that at the temperatures above 30 K the properties of these samples reflect the behavior of electrons no t only ill the very delta-layer but also in the adjacent regions showi ng the alloyed semiconductor properties with a clearly defined tempera ture region of exponential variation of resistance with inverse temper ature.