PECULIARITIES OF ELECTRONIC-PROPERTIES OF DELTA[SB] LAYERS IN EPITAXIAL SI .2. EFFECTS OF WEAK-LOCALIZATION AND ELECTRON-ELECTRON INTERACTION

The temperature (from 1.5 to 2 K) and magnetic field (up to 4.5 T) dep endences of conductivity and Hall's emf have been studied in delta[Sb] -layers of Si with a different Hall's concentration of charge carriers . It is shown that these dependences can be described to a high degree of accuracy by the quantum corrections to Conductivity associated wit h effects of weak localization of electron and electron-electron inter action in a two-dimensional system. The temperature dependence of elec tron phase relaxation time, the spin-orbit interaction time and the pa rameter lambda(D) of electron-electron interaction have been determine d. It is found that decreasing concentration of electron in a delta-la yer involves a decrease in lambda(D) that may be explained by the pecu liarities of screening processes in a two-dimensional electronic syste m.