The influence of uniaxial pressure along the crystallographic axis a o
n I-V characteristics of N6Se(3) single crystals at CDW state has been
studied experimentally over the temperature region wherein the second
phase transition takes place at 59 K. It is shown that the increasing
pressure causes the growth of the threshold fields E(th) and pinning
energy epsilon(g). Comparison between the results obtained and existin
g CDW tunneling models is made.