METHODS FOR MEASURING THE CONDUCTANCE OF SEMICONDUCTORS

Citation
Td. Alieva et al., METHODS FOR MEASURING THE CONDUCTANCE OF SEMICONDUCTORS, Industrial laboratory, 61(2), 1995, pp. 95-97
Citations number
1
Categorie Soggetti
Materials Science, Characterization & Testing","Instument & Instrumentation
Journal title
ISSN journal
00198447
Volume
61
Issue
2
Year of publication
1995
Pages
95 - 97
Database
ISI
SICI code
0019-8447(1995)61:2<95:MFMTCO>2.0.ZU;2-P
Abstract
New methods for measuring semiconductor conductance are proposed that eliminate the error due to the Peltier effect. In Method 1, the emf du e to the Peltier effect is measured by auxiliary probes placed on a la yer of the same material, electrically insulated from the specimen. In Method 2, the temperature gradient generated by the Peltier effect in one specimen is offset by the temperature gradient generated in an ot her specimen. In Method 3, notches are cut in the specimen, causing br anching of the current; auxiliary probes, which make it possible to ac count for the emf due to the Peltier effect, are placed between the no tches.