New methods for measuring semiconductor conductance are proposed that
eliminate the error due to the Peltier effect. In Method 1, the emf du
e to the Peltier effect is measured by auxiliary probes placed on a la
yer of the same material, electrically insulated from the specimen. In
Method 2, the temperature gradient generated by the Peltier effect in
one specimen is offset by the temperature gradient generated in an ot
her specimen. In Method 3, notches are cut in the specimen, causing br
anching of the current; auxiliary probes, which make it possible to ac
count for the emf due to the Peltier effect, are placed between the no
tches.