A REVIEW OF SOI TRANSISTOR MODELS

Several SOI MOSFET models based on 1-D solution of Poisson's equation are compared in terms of their accuracy. A brief discussion of the sim plifying assumptions leads to a conclusion that the methods used for s urface potential evaluation strongly influence the accuracy of a model . An analytical approximation for the front surface potential is prese nted and then introduced into the fully analytical Lim-Fossum model [1 ]. The accuracy of the modified model is better than that of the origi nal Lim-Fossum model [1]. (C) 1997 Elsevier Science Ltd.