HIGH-TEMPERATURE DIAMOND P-N-JUNCTION - B-DOPED HOMOEPITAXIAL LAYER ON N-DOPED SUBSTRATE

Boron-doped homoepitaxial layers have been selectively grown on synthe tic type Ib substrates of (100) cut. Ohmic contacts were formed by eva porating a Mo/Pt/Au sandwich and subsequent annealing at 950 degrees C for 1/2 h. Current-voltage characteristics of diode type could be tak en in vacuum in the temperature range 360-900 degrees C. Green light e mission due to electroluminescence was observed from the junction area showing a maximum at a wavelength of 534 nm corresponding to a photon energy of 2.32 eV. The normalized emission spectrum was measured over the temperature range 320-440 degrees C with the device in air and wa s found independent of temperature and baron concentration. (C) 1995 A merican Institute of Physics.