IDEAL HYDROGEN TERMINATION OF SI(001) SURFACE BY WET-CHEMICAL PREPARATION

A nearly ideal Si(001) surface was prepared by a wet-chemical method w ith a solution of HF:HCl=1:19 (pH<1). The surface was examined by scan ning tunneling microscopy and was found to be covered by the uniform d ihydride phase. Its successful preparation was the direct consequence of the following facts: The suppression of the (111) facet formation d ue to a low concentration of OH ions in the etchant solution and the s tabilization of the surfaces structure due to the formation of the ord ered steps. (C) 1995 American Institute of Physics.