AMORPHOUS TRANSPARENT ELECTROCONDUCTOR 2CDO-CENTER-DOT-GEO2 - CONVERSION OF AMORPHOUS INSULATING CADMIUM GERMANATE BY ION-IMPLANTATION

Amorphous 2CdO . GeO2 thin films (optical band gap determined by a Tau c plot; 3.4 eV) prepared by rf sputtering were implanted with H+ or Li + ions to a dose of 2 x 10(16) cm(-2). Direct current conductivities i n the specimens at 300 K were increased from 3 X 10(-9) S cm(-1) to si milar to 10 S cm(-1) after the implantation The conductivities in thes e implanted specimens remained almost constant down to 77 K. No delete rious coloring was perceived after implantation. The Hall mobilities ( conduction type, n) in the implanted specimens at similar to 300 K wer e similar to 5 cm(2) V-1 s(-1) which are larger by several orders of m agnitude than those in existing amorphous semiconductors. Such a large mobility indicates that the electronic state near the bottom of the c onduction band of this amorphous material is extended. (C) 1995 Americ an Institute of Physics.