MONTE-CARLO ANALYSIS OF ELECTRONIC NOISE IN SEMICONDUCTOR-MATERIALS AND DEVICES

We review recent results concerning the microscopic analysis of electr onic noise in semiconductor unipolar structures in the frequency range where 1/f noise can be neglected. Calculations are based on a Monte C arlo simulator of the carrier motion self-consistently coupled with a Poisson solver. Both current- and voltage-noise operation modes are co nsidered and their respective advantages illustrated. The analysis is applied to structures with increasing degree of complexity, that is: h omogeneous materials, resistors, n(+) nn(+) diodes, Schottky-barrier d iodes and GaAs MESEFTs. The main sources of noise like diffusion, gene ration-recombination, coupling between velocity and local electric fie ld fluctuations, etc. are treated in the presence of electric fields o f arbitrary strength. Results should constitute the basis for a physic al interpretation of electronic noise in most semiconductor materials and devices thus providing inputs for improving quality and reliabilit y figures of merit. (C) 1997 Elsevier Science Ltd.