REAL-TIME SPECTROSCOPIC ELLIPSOMETRY STUDY OF HYDROGENATED AMORPHOUS-SILICON P-I-N SOLAR-CELLS - CHARACTERIZATION OF MICROSTRUCTURAL EVOLUTION AND OPTICAL GAPS

Spectroscopic ellipsometry measurements have been performed during the preparation of hydrogenated amorphous silicon p-i-n solar cells in th e SnO2:F/p-i-n/Cr configuration. Postdeposition data analysis yields t he evolution of bulk, surface roughness, and interface layer thickness es with similar to 0.2 Angstrom sensitivity. in addition, the dielectr ic functions and optical gaps of the p-, i-, and n-layers are determin ed in the analysis. With the real time measurement approach, the layer properties are determined in the actual device configuration, rather than being inferred indirectly from studies of thick film counterparts . (C) 1995 American Institute of Physics.