EPITAXIAL HETEROSTRUCTURES YBA2CU3O7-DELTA KTAO3 FOR MICROWAVE APPLICATIONS/

Citation
Ya. Boikov et al., EPITAXIAL HETEROSTRUCTURES YBA2CU3O7-DELTA KTAO3 FOR MICROWAVE APPLICATIONS/, Applied physics letters, 67(18), 1995, pp. 2708-2710
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
67
Issue
18
Year of publication
1995
Pages
2708 - 2710
Database
ISI
SICI code
0003-6951(1995)67:18<2708:EHYKFM>2.0.ZU;2-I
Abstract
Combinations of high T-C superconducting and ferroelectric films may g ive rise to tunable, high-Q microwave components. c-axis oriented YBa2 Cu3O7-delta films were grown by laser ablation on (001) and vicinicall y cut KTaO3 substrates and studied by x-ray diffraction and electron m icroscopy. Competitive superconducting properties were registered. YBa 2Cu3O7-delta/KTaO3/YB2Cu3O7-delta trilayers were deposited on silicon- on-sapphire buffered by CeO2/Y-ZrO2. The dielectric permittivity of KT O3 at 15-100 K decreased considerably when the layer was polarized by a dc voltage. A loss factor tan delta=0.007 was measured at 100 kHz an d T=50-100 K. (C) 1995 American Institute of Physics.