D. Herrendorfer et Ch. Patterson, DIPOLE WAVES IN SEMICONDUCTORS - THE DIELECTRIC FUNCTION AND PLASMA-OSCILLATIONS OF SILICON, Journal of physics and chemistry of solids, 58(2), 1997, pp. 207-220
The relationship between bond polarisability, local fields and the die
lectric function of bulk silicon is investigated using the discrete di
pole model. In this model a valence electron pair (a bond) is treated
as a point-like polarisable unit which responds to the local field at
the bond by creating a dipole moment there. We assume an unretarded fo
rm for bond-bond interactions (local fields) and find the normal modes
of an infinite lattice of bonds with the diamond structure. We call t
hese normal modes dipole waves and express the dielectric function for
bulk silicon in terms of them. Dipole waves corresponding to optical
transitions and bulk plasma oscillations are identified and it is show
n that the experimental peak positions and intensities in both the die
lectric function and the dielectric loss function of silicon are repro
duced by this model. The form of bond-bond interaction chosen is the e
lectrostatic interaction between point-like dipoles but this approxima
tion breaks down at short range. Bond-bond interactions at short range
and bond polarisabilities are therefore calculated from ab initio clu
ster calculations. The static dielectric function is obtained as a fun
ction of bond polarisability using point dipolar local fields and loca
l fields corrected at short range for the finite size of a bond. Compa
rison is made with the Clausius-Mossotti relationship between dielectr
ic function and polarisability. (C) 1997 Elsevier Science Limited. All
rights reserved.