RECOMBINATION IN HGGAINS4 SINGLE-CRYSTALS

Authors
ANEDDA A CASU MB SERPI A BURLAKOV II TIGINYANU IM URSAKI VV
Citation
A. Anedda et al., RECOMBINATION IN HGGAINS4 SINGLE-CRYSTALS, Journal of physics and chemistry of solids, 58(2), 1997, pp. 325-330
Citations number
14
Categorie Soggetti
Physics, Condensed Matter",Chemistry
Journal title
Journal of physics and chemistry of solids → ACNP
ISSN journal
00223697
Volume
58
Issue
2
Year of publication
1997
Pages
325 - 330
Database
ISI
SICI code
0022-3697(1997)58:2<325:RIHS>2.0.ZU;2-P
Abstract
Photoelectronic processes in HgGaInS4 have been studied by photoconduc tivity, thermally stimulated conductivity and photoluminescence. An ex ponential distribution of traps with a slope of 23 meV\decade as well as a further electron trap system with an activation energy of 70 meV have been localized below the bottom of the conduction band. Radiative electron transitions are shown to occur mainly from exponentially dis tributed traps to an acceptor level characterized by an activation ene rgy of 220 meV. (C) 1997 Elsevier Science Ltd. All rights reserved.