DETERMINATION OF THE RF-NOISE SOURCE PARAMETERS IN ALLNAS GAINAS-HEMTHETEROSTRUCTURES BASED ON MEASURED NOISE TEMPERATURE-DEPENDENCE AGAINST ELECTRIC-FIELD/

The noise temperature dependence on the electric field in an AlInAs/Ga InAs-HEMT heterostructure has been measured. It was found that the dep endence of the noise temperature on the electric held as GaAs-MESFETs and in AlInAs/GaInAs-HEMTs is remarkably different. For this reason a different model must be used for AlInAs/GaInAs-HEMTs. Based on the mea sured noise temperature dependence on the electric held, an analytic n oise model for the AlInAs/GaInAs-HEMT has been developed. The noise so urce parameters were calculated and compared with extracted noise sour ce parameters from noise measurements.