INVESTIGATION OF CONCENTRATION PROFILES AND GROWTH-RATE OF INAS LPE BY COMPUTER-SIMULATION TECHNIQUE

The diffusive-transport model has been used to study the mechanism of LPE growth of InAs. Computer simulation technique has been followed to calculate the concentration profiles of solute at successive equally spaced places in front of the growing interface under normal condition s of LPE at successive time intervals with applying appropriate bounda ry conditions. Using the data simulated for concentration profiles, th e growth rate of InAs has been calculated. This model also allows to i nvestigate the amount of InAs etched or grown as a function of time. T he results are discussed in detail.