In order to optimize the series array performance of YBa2Cu3O7-x (YBCO
) grain boundary shunted junctions, a method to determine and control
the junction resistance R(s) and Au/YBCO contact resistivity rho(c) ha
s been developed. 200 nm thick c-oriented YBCO films were grown by int
ermittent thermal coevaporation opt bicrystal yttria-stabilized zircon
ia substrates. A gold contact overlayer of thickness d(n) was deposite
d in situ. Normal junction resistances have been measured as a functio
n of d(n) and shunt width w. It was shown that, in accordance with the
oretical estimates, the junction shunt resistance is essentially contr
olled by the c-axis Au/YBCO interface specific resistance and scales a
s R(s) = 1/w root rho(c) rho(n)/d(n). The product rho(c) rho(n) simila
r or equal to 3 . 10(-14) Omega(2)cm(3) was estimated from the experim
ental data, leading to rho(c) approximate to 10(-8) Omega cm(2) for ty
pical values of rho(n) for gold thin films.