Authors
Citation
P. Lobotka et al., JOSEPHSON-JUNCTION WITH AN AMORPHOUS-SILICON BARRIER, Journal of low temperature physics, 106(3-4), 1997, pp. 381-386
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00222291
Volume
106
Issue
3-4
Year of publication
1997
Pages
381 - 386
Database
ISI
SICI code
0022-2291(1997)106:3-4<381:JWAAB>2.0.ZU;2-U
Abstract
A Josephson junction Nb/Si/Nb with a 10 nm thick amorphous silicon bar
rier is studied. The upper electrode contains a 2 nm thick sublayer of
amorphous phase adjacent to the barrier, as revealed by cross-section
al TEM. Thus, the junction can be considered as a S-I-N-S system with
the N layer represented by amorphous niobium. Peculiarities in the I-V
and Delta(T) dependencies are observed and explained as a consequence
of a proximity effect present in the upper electrode.