COBALT DISILICIDE BUFFER LAYER FOR YBCO FILM ON SILICON

The CoSi2 films were used as buffer layers of YBCO/CoSi2/Si(100), YBCO /ZrO2/CoSi2/Si(100) and YBCO/CeO2/YSZ/CoSi2/epi-Si/Al2O3 heterostructu res in this work. Transition temperatures of YBCO films were obtained up to 86K for YBCO flints deposited by laser ablation on the top of Ce O2/YSZ/CoSi2/Si/Al2O3 structure. Local nucleation on the crystal defec ts of silicon, the phenomenon of lateral directed growth (DLG) and agg lomeration of CoSi2 phase are responsible for grain boundaries (GB) po sition in CoSi2 layer and its roughness. The roughness was decreased u sing an additional Zr film on the top structure.