THE PROBLEMS OF NATIVE SIO2 LAYER REMOVING FOR EPITAXIAL-GROWTH OF YSZ FILM ON SI

The preparation processes of epitaxially grown YSZ (Yttrium stabilized ZrO2) buffer layers on silicon (100) wafers were investigated. The '' etching'' procedure, at which the thin (similar to 5 nm) SiO2 native a morphous layer from the Si surface was reduced to volatile SiO by depo sition of a few nm thick Zr layer and subsequent annealing at low pres sure, was monitored by mass spectrometer. The subsequent YSZ layer was deposited by evaporation or RF sputtering technique and examined by X RD and TEM observations. The results show that the epitaxy of YSZ laye r is strongly, influenced by efficiency of amorphous SiO2 reduction at Si surface.