LASING TRANSITIONS BETWEEN SELF-LOCALIZED BARRIER-STATE ELECTRONS ANDCONFINED-STATE HEAVY HOLES IN INGAAS-INGAASP-INP MULTIPLE-QUANTUM-WELL LASERS

We describe the operation of an InGaAs-InGaAsP multiple-quantum-well l aser under the condition of very-high-carrier density, Internal Coulom b fields induce then a self localization of barrier-state electrons in the vicinity of the quantum wells, Under certain conditions, stimulat ed transitions are possible between these self-localized electrons and the second level of confined holes so that the laser changes its osci llation wavelength from approximately 1450 nm to the 1340 mm range, We predict this self induced laser transition using a detailed model of the quantum-well laser injection process and demonstrate it experiment ally, We show that both drive current and temperature enhance this spe cial transition and that controllable switching between the two is pos sible, We also demonstrate different modulation capabilities of the tw o transitions.