A lumped small-signal model for intensity and frequency modulation res
ponse of semiconductor lasers, including the effects of longitudinal s
patial hole burning (SHE), is presented. It is shown that the laser dy
namics including SHE-effects can be accurately described by three smal
l-signal rate equations. The simplicity of the model gives new insight
into SHE-effects on modulation response and cavity state stability. I
t is shown that SHE-effects have a cut-off frequency that depends on t
he carrier lifetime (including stimulated recombination) and the feedb
ack of perturbations in the longitudinal intensity distribution during
modulation.