THERMOCHROMIC V1-XNBXO2 SOL-GEL THIN-FILMS

Citation
G. Guzman et al., THERMOCHROMIC V1-XNBXO2 SOL-GEL THIN-FILMS, European journal of solid state and inorganic chemistry, 32(7-8), 1995, pp. 851-861
Citations number
19
Categorie Soggetti
Chemistry Inorganic & Nuclear
ISSN journal
09924361
Volume
32
Issue
7-8
Year of publication
1995
Pages
851 - 861
Database
ISI
SICI code
0992-4361(1995)32:7-8<851:TVST>2.0.ZU;2-N
Abstract
Pure and doped vanadium dioxide was synthesised from alkoxide precurso rs. VO(OAmt)(3) solutions are spin-coated onto fused silica substrates and transformed into crystalline VO2 by a thermal treatment under a r educing atmosphere (Ar-H-2 5%). Crystalline thin films about 0.2 mu m in thickness are obtained around 500 degrees C. Doped VO2 films are si mply prepared by mixing precursor solutions. All these V1-xNbxO2 films (x < 0.8) exhibit the typical metal-insulator transition accompanied by an abrupt change in electrical and optical properties. V1-xNbxO2 th in films exhibit a high infrared reflectivity in the metallic state an d could be used as optical switches.