We have fabricated intrinsic Josephson junctions for (Bi,Pb)(2)Sr2Ca2C
u3Ox thin films and investigated their electronic characteristics. Mes
a structures with the junctions are fabricated on the surface of high-
quality films prepared by rf-sputtering and subsequent heat treatment.
The junctions show distinct hysteresis and a multiple branching struc
ture with a periodic voltage jump at a current-voltage response. These
results demonstrate that the fabricated mesas consist of stacked seri
es SIS junctions. From this periodic structure, a voltage jump of 26-2
8 mV is obtained for the 2223 phase at 4.2 K.