LOW-THRESHOLD AND HIGH-EFFICIENCY ND-S-VAP LASER

Citation
Sz. Zhao et al., LOW-THRESHOLD AND HIGH-EFFICIENCY ND-S-VAP LASER, Chinese Physics Letters, 12(6), 1995, pp. 355-357
Citations number
2
Categorie Soggetti
Physics
Journal title
ISSN journal
0256307X
Volume
12
Issue
6
Year of publication
1995
Pages
355 - 357
Database
ISI
SICI code
0256-307X(1995)12:6<355:LAHNL>2.0.ZU;2-S
Abstract
The absorption spectrum of a new sort of crystal Nd:S-VAP was measured , which showed that Nd:S-VAP can be appropriately pumped at 583.0 and 809.0 nm. By using tunable dye-laser (570.0-600.0 nm) as pumping light , the performance of low threshold and high efficiency Nd:S-VAP laser las been realized. The characteristics of the output laser, such as 1. 5 nm linewidth, 5 ns pulse width, almost total polarity, up to 50% con version efficiency, down to 2 mJ threshold energy and so on, were pres ented. Meanwhile, the prospect of Nd:S-VAP crystal for low threshold, high efficiency miniature laser was discussed.