VERTICAL-CAVITY SURFACE-EMITTING LASER FABRICATED BY 2 IMPLANTATIONS USING TUNGSTEN WIRES AS MASK

Authors
LIU Y DU GT WANG ZL JIANG XY LI XM SONG JF ZHANG XB GAO DS
Citation
Y. Liu et al., VERTICAL-CAVITY SURFACE-EMITTING LASER FABRICATED BY 2 IMPLANTATIONS USING TUNGSTEN WIRES AS MASK, Optical and quantum electronics, 28(12), 1996, pp. 1781-1785
Citations number
7
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Optical and quantum electronics → ACNP
ISSN journal
03068919
Volume
28
Issue
12
Year of publication
1996
Pages
1781 - 1785
Database
ISI
SICI code
0306-8919(1996)28:12<1781:VSLFB2>2.0.ZU;2-F
Abstract
The design and fabrication of a room-temperature continuous wave (cw) vertical-cavity surface-emitting laser is reported. The device was fab ricated by two deep H+ implantations using parallel tungsten wires as the resist mask. The direction of the mask in the first implantation i s perpendicular to that in the second. The fabrication process is the simplest ever reported for vertical-cavity surface-emitting laser fabr ication. A lowest threshold current of 17 mA and a maximum tight outpu t power of 4 mW were obtained.