IMAGE SIMULATION USING MONTE-CARLO METHODS - ELECTRON-BEAM AND DETECTOR CHARACTERISTICS

The rapid increase of computer speed allows using Monte Carlo simulati on procedures for the analysis of complicated structures not only in a line scan mode but also in a three-dimensional approach similar to th e scanning procedure in a scanning electron microscope. Simulation of image formation is a vital link in performing image analysis to obtain precise measurements, to provide the necessary connection between ima ge parameters and structural dimensions, and to reflect important micr oscope beam and detector parameters. Monte Carlo simulation based on a single-scattering procedure was used for backscattered electron image simulation of three-dimensional multilayer and multielement structure s. The procedure takes into account the effect of a solid state detect or's electrical and angular characteristics and the effect of the elec tron beam dimensions on the image quality and artifacts.