DETERMINATION OF CUPT-TYPE ORDERING IN GAINP BY MEANS OF X-RAY-DIFFRACTION IN THE SKEW, SYMMETRICAL ARRANGEMENT

This letter presents a simple, quick, nondestructive method for the de termination of ordering in Ga0.51In0.49P layers using x-ray diffractom etry. The skew, symmetric arrangement of x-ray reflection was used for this purpose enabling the measurements of all allowed (hkl) reflectio ns. Ordered Ga0.51In0.49P layers grown by metalorganic vapor-phase epi taxy at different substrate temperatures were studied. The {1/2,1/2,1/ 2}, {1/2,1/2,3/2}, and {1/2,1/2,5/2} reflections of the ordering-induc ed monolayer superlattices have been observed. The experimental result s are discussed in detail, demonstrating that x-ray diffractometry is a powerful means to evaluate ordering in semiconductors. (C) 1995 Amer ican Institute of Physics.