PRESSURE INFLUENCE ON THE DECAY OF THE PHOTOLUMINESCENCE IN SI NANOPOWDER GROWN BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

Authors
ROURA P COSTA J SULIMOV NA MORANTE JR BERTRAN E
Citation
P. Roura et al., PRESSURE INFLUENCE ON THE DECAY OF THE PHOTOLUMINESCENCE IN SI NANOPOWDER GROWN BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 67(19), 1995, pp. 2830-2832
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
19
Year of publication
1995
Pages
2830 - 2832
Database
ISI
SICI code
0003-6951(1995)67:19<2830:PIOTDO>2.0.ZU;2-F
Abstract
The quenching of the photoluminescence (PL) intensity of Si powder gro wn by plasma-enhanced chemical vapor deposition due to the residual ga s pressure is reported. For He as well as for Ar, the dependence is ex ponential (I(PL)(p)roportional to e(-P/P,0)) with P-0 depending on the gas. This behavior is further analyzed through the pressure influence on the PL decay transients. Conclusions are drawn concerning the way the presence of the gas influences the emitting centers. (C) 1995 Amer ican Institute of Physics.