2 TYPES OF LOCAL OXIDE SUBSTRATE DEFECTS IN VERY THIN SILICON DIOXIDEFILMS ON SILICON/

Citation
Ws. Lau et al., 2 TYPES OF LOCAL OXIDE SUBSTRATE DEFECTS IN VERY THIN SILICON DIOXIDEFILMS ON SILICON/, Applied physics letters, 67(19), 1995, pp. 2854-2856
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
67
Issue
19
Year of publication
1995
Pages
2854 - 2856
Database
ISI
SICI code
0003-6951(1995)67:19<2854:2TOLOS>2.0.ZU;2-X
Abstract
The local oxide defects observed in thin silicon dioxide films on p-ty pe Si were studied with the electron beam induced current/tunneling cu rrent microscopy technique. Excluding pinholes, all the local defects observed are local oxide/substrate defects, i.e., local oxide defects propagated from defects in the Si substrate into the SiO2. It was obse rved that local oxide/substrate defects can be further differentiated into two different types by studying the transition from the true oxid e electron beam induced current contrast to the tunneling current micr oscopy contrast. (C) 1995 American Institute of Physics.