Ws. Lau et al., 2 TYPES OF LOCAL OXIDE SUBSTRATE DEFECTS IN VERY THIN SILICON DIOXIDEFILMS ON SILICON/, Applied physics letters, 67(19), 1995, pp. 2854-2856
The local oxide defects observed in thin silicon dioxide films on p-ty
pe Si were studied with the electron beam induced current/tunneling cu
rrent microscopy technique. Excluding pinholes, all the local defects
observed are local oxide/substrate defects, i.e., local oxide defects
propagated from defects in the Si substrate into the SiO2. It was obse
rved that local oxide/substrate defects can be further differentiated
into two different types by studying the transition from the true oxid
e electron beam induced current contrast to the tunneling current micr
oscopy contrast. (C) 1995 American Institute of Physics.