SUPPRESSION OF DISLOCATION FORMATION IN SILICON BY CARBON IMPLANTATION

We have examined the role of carbon co-implantation in the formation o f secondary defects in self-ion-irradiated Si(100). Implantation of Si ions (540 keV energy, 10(15) ions/cm(2) at 1.3X10(11) ions/cm(2)/s, T -i=90 degrees C) followed by a 900 degrees C, 15 min anneal leads to t he growth of an extended defect band at the end of range. Range matche d-carbon co-implantation (300 keV energy, 10(15) ions/cm(2) plus 500 k eV energy 10(15) ions/cm(2) of 1.5X10(11) ions/cm(2)/s, T-i=90 degrees C) can be used to modify this defect development dramatically. While direct co-implantation of carbon and silicon ions to similar concentra tions has no apparent effect on the formation of extended defects, suc h formation is suppressed when the implanted C is incorporated substit utionally into the silicon lattice. These results are discussed in the context of recent reports on C suppression of the transient enhanced diffusion of boron. (C) 1995 American Institute of Physics.