THE INFLUENCE OF PRECLEANING PROCESS ON THE GATE OXIDE FILM FABRICATED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA OXIDATION

The influence of the precleaning process on the characteristics of SiO 2 film grown by using electron cyclotron resonance (ECR) plasma oxidat ion at room temperature is presented in this work. We find that the gr owth rate, electrical properties, and reliability of the ECR plasma gr own oxide is improved by this precleaning step. Two growth mechanisms are found which determine the electrical properties of the plasma grow n oxide. The plasma damage is also discussed. We find that plasma oxid ation produces little plasma damage in our experiments. Excellent ECR plasma grown silicon dioxide with good electrical properties and relia bility characteristics are obtained by this precleaning technique.