CHARGE-TO-BREAKDOWN CHARACTERISTICS OF THIN GATE OXIDE AND BURIED OXIDE ON SIMOX SOI WAFERS

The quality of thin gate oxides grown on separation by implantation of oxygen substrates was examined. The basic mechanisms for time depende nt breakdown were shown to be the same as oxides grown on bulk substra tes, while detailed I-V characteristics of the gate oxide indicates th at there can be more oxide trapped charges, most likely caused by the material defects of silicon on insulator wafers, that do not significa ntly reduce the charge-to-breakdown (Q(bd)) value. However, by examini ng the early-failure-rate, the catastrophic gate oxide defect density can be deduced. A similar study was also performed to evaluate the bur ied oxide quality.