ELECTRICAL-PROPERTIES OF THERMALLY EVAPORATED INDIUM OXIDE THIN-FILMS

Authors
GEORGE J MENON CS
Citation
J. George et Cs. Menon, ELECTRICAL-PROPERTIES OF THERMALLY EVAPORATED INDIUM OXIDE THIN-FILMS, Indian Journal of Pure & Applied Physics, 33(11), 1995, pp. 700-705
Citations number
NO
Categorie Soggetti
Physics
Journal title
Indian Journal of Pure & Applied Physics → ACNP
ISSN journal
00195596
Volume
33
Issue
11
Year of publication
1995
Pages
700 - 705
Database
ISI
SICI code
0019-5596(1995)33:11<700:EOTEIO>2.0.ZU;2-P
Abstract
The electrical conductivity and activation energies have been measured in the temperature range 27-377 degrees C for the In2O3 thin films pr epared by thermal evaporation in oxygen atmosphere. It is found that a nnealed In2O3 thin film possesses resistivity 2-10 times more than tha t in as deposited film. The variation of activation energy with thickn ess and temperature has been analysed to understand the conduction mec hanism. The oxygen deficiency is used to explain the electrical proper ties.