Jy. Lee et al., MEDIUM-TEMPERATURE PERFORMANCE OF CERMET ELECTRODE CONTAINING AG AND 3BI(2)O(3)CENTER-DOT-WO3, Sensors and actuators. B, Chemical, 28(3), 1995, pp. 211-215
Cermet electrodes composed of Ag and 3Bi(2)O(3) . WO3 have been prepar
ed on a 3Bi(2)O(3) . WO3 electrolyte by screen printing. The interfaci
al resistance of the cermet electrode is measured by a.c. impedance te
chnique in air. The electrode shows the lowest interfacial resistance,
103 Omega cm(2) at 400 degrees C, when the oxide content is 50 wt.% a
nd the electrode thickness is above 35 mu m This electrode resistance
is lower than that of a pure Ag electrode (by a factor of three) and o
ther reported interfacial resistances on bismuth-based electrolytes. T
he activation energy for the interfacial conductivity of the cermet el
ectrode, 1.2 eV, is the same as that of the Ag electrode.