AMORPHOUS SIC LAYERS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA- SPECTROSCOPIC ELLIPSOMETRIC MEASUREMENTS

Hydrogenated silicon carbide was deposited in electron cyclotron reson ance plasma. Pure methane and silane diluted with 5% argon were used a s gas precursors, The compositions of the layers depends on the CH4/Si H4 flow ratio used for deposition. For flow ratios equal to or larger than 2, around 80% of the layer consists of Si-C bonds, the rest being Si-H-n and C-H-n bonds. The amorphous silicon content increases as th e flow ratio decreases, as indicated from ellipsometry and infrared me asurements.