CURRENT TRANSPORT MECHANISMS IN LOW RESISTIVE CDS THIN-FILMS

Authors
GUNAL I PARLAK M
Citation
I. Gunal et M. Parlak, CURRENT TRANSPORT MECHANISMS IN LOW RESISTIVE CDS THIN-FILMS, Journal of materials science. Materials in electronics, 8(1), 1997, pp. 9-13
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Journal of materials science. Materials in electronics → ACNP
ISSN journal
09574522
Volume
8
Issue
1
Year of publication
1997
Pages
9 - 13
Database
ISI
SICI code
0957-4522(1997)8:1<9:CTMILR>2.0.ZU;2-1
Abstract
The current transport mechanisms in polycrystalline CdS thin films hav e been studied as a function of temperature over the temperature range 20-230 K. Conductivity data for the high temperature region has been analysed using Seto's model of thermionic emission. At intermediate te mperatures it was found that thermionic emission and tunnelling of car riers through the potential barrier both contribute to the conductivit y. Below 100 K Mott's hopping process appears to be the predominant co nduction mechanism.